| 1. | Bittencourt, A. C. R. ; Marques, G. E. ; Gobato, Y. Galvão ; Vercik, A. ; Camps, I. ; Brasil, M. J. S. P.. Magneto-tunneling and spin selection of photo-induced holes in GaAs/GaAlAs double barrier diodes. Em: 12th Brasilian Workshop on Semiconductor Physics, 2005, São José dos Campos. 12th Brasilian Workshop on Semiconductor Physics. Program and Abstracts, p. Th084, 2005. |
| 2. | Camps, I.; Makler, S. S. ; Vercik, A. ; Gobato, Y. Galvão ; Brasil, M. J. S. P. ; Marques, G. E.. Dynamic formation of excitonic complexes in resonant tunneling diodes. Em: XXVIII Encontro Nacional de Física da Matéria Condensada, 2005, Santos. XXVIII Encontro Nacional de Física da Matéria Condensada, 2005. |
| 3. | Camps, I.; Makler, S. S. ; Vercik, A. ; Gobato, Y. Galvão ; Marques, G. E. ; Brasil, M. J. S. P.. The dynamics of excitons and trions in resonant tunneling diodes. SOLID STATE COMMUNICATIONS. v. 135, n. 4, p. 241-246, 2005. Qualis: A4 |
| 4. | Camps, I.; Santos, L. F. dos ; Gobato, Y. Galvão ; Carvalho, H. B. de ; Brasil, M. J. S. P. ; Marques, G. E. ; Henini, M. ; Eaves, L. ; Hill, G.. Hole charge buildup in asymmetric p-type resonant tunneling diodes. Em: 12th Brasilian Workshop on Semiconductor Physics, 2005, São José dos Campos. 12th Brasilian Workshop on Semiconductor Physics. Program and Abstract, p. Tu067, 2005. |
| 5. | Camps, I.; Vercik, A. ; Gobato, Y. Galvão ; Brasil, M. J. S. P. ; Makler, S. S. ; Marques, G. E.. Effects of excitonic complex formation in resonant tunneling diodes. Em: 12th Brasilian Workshop on Semiconductor Physics, 2005, São José dos Campos. 12th Brasilian Workshop on Semiconductor Physics. Program and Abstract, p. Tu083, 2005. |
| 6. | Camps, I.; Vercik, A. ; Gobato, Y. Galvão ; Brasil, M. J. S. P. ; Marques, G. E. ; Makler, S. S.. Negative Charged Excitons in Double Barrier Diodes. MICROELECTRONICS JOURNAL. v. 36, p. 1038-1040, 2005. Qualis: Não identificado (MICROELECTRONICS JOURNAL) |
| 7. | Camps, I.; Vercik, A. ; Gobato, Y. Galvão ; Brasil, M. J. S. P. ; Marques, G. E. ; Makler, S. S.. Negative charged excitons in double barrier diodes. Em: NanoSemiMat-4 Network / CNPq, 2005, São Pedro, 2005. |
| 8. | Camps, I.; Vercik, A. ; Gobato, Y. Galvão ; Makler, S. S. ; Brasil, M. J. S. P.. The Dynamics of trionformation in double barrier Structures. Em: 9th Optics of Excitons in Confined Systems, 2005, Southampton, 2005. |
| 9. | Camps, I.; Vercik, A. ; Santos, L. F. dos ; Gobato, Y. Galvão. Influence of minority carrier transport in the optical properties of double barrier diodes. Em: 12th Brasilian Workshop on Semiconductor Physics, 2005, São José dos Campos. 12th Brasilian Workshop on Semiconductor Physics. Program and Abstract, p. Tu069, 2005. |
| 10. | Carvalho, H. B. de ; Brasil, M. J. S. P. ; Gobato, Y. Galvão ; Camps, I. ; Marques, G. E. ; Henini, M. ; Eaves, L. ; Hill, G.. Spin polarization of holes in nonmagnetic resonant tunneling structures. Em: 9th Optics of Excitons in Confined Systems, 2005, Southampton, 2005. |
| 11. | Carvalho, H. B. de ; Camps, I. ; Gobato, Y. Galvão ; Brasil, M. J. S. P. ; Lopez-Richard, V. ; Marques, G. E. ; Henini, M. ; Eaves, L. ; Hill, G.. Voltage-controlled hole spin injection in nonmagneticresonant tunneling diodes. Em: 12th Brasilian Workshop on Semiconductor Physics, 2005, São José dos Campos. 12th Brasilian Workshop on Semiconductor Physics. Program and Abstract, p. Th087, 2005. |
| 12. | Carvalho, H. B. de ; Gobato, Y. Galvão ; Brasil, M. J. S. P. ; Lopez-Richard, V. ; Marques, G. E. ; Camps, I. ; Henini, M. ; Eaves, L. ; Hill, G.. Hole spin polarizarion in double barrier diodes. Em: NanoSemiMat-4 Network / CNPq, 2005, São Pedro, 2005. |
| 13. | Gobato, Y. Galvão ; Brasil, M. J. S. P. ; Camps, I. ; Carvalho, H. B. de ; Santos, L. F. dos ; Marques, G. E. ; Henini, M. ; Eaves, L. ; Hill, G.. Charge buildup effects in asymmetric p-type resonant tunneling diodes. MICROELECTRONICS JOURNAL. v. 36, p. 356-358, 2005. Qualis: Não identificado (MICROELECTRONICS JOURNAL) |
| 14. | Gobato, Y. Galvão ; Camps, I. ; Carvalho, H. B. de ; Brasil, M. J. S. P. ; Lopez-Richard, V. ; Marques, G. E. ; Henini, M. ; Eaves, L. ; Hill, G.. Hole spin selection in GaAs/GaAlAs double barrier diodes. Em: Workshop Semiconductor Spintronics, 2005, Brasilia, 2005. |
| 15. | Vercik, A. ; Gobato, Y. Galvão ; Camps, I. ; Marques, G. E. ; Brasil, M. J. S. P. ; Makler, S. S.. Kinetics of excitonic complexes on tunneling devices. Physical Review. B, Condensed Matter. (Cessou 1997. Cont. 1098-0121 Physical Review. B, Condensed Matter and Materials Physics). v. 71, n. 075310, p. 075310, 2005. Qualis: Não identificado (B, CONDENSED MATTER AND MATERIALS PHYSICS)) |